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2SK1303
Silicon N Channel MOS FET
REJ03G0922-0200 (Previous: ADE-208-1261) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive * * * *
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D G 1. Gate 2. Drain (Flange) 3. Source
1
S 2 3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1303
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch
*1
Ratings 100 20 30 120 30 100 150 -55 to +150
Unit V V A A A W
*2
Tstg
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 100 20 -- -- 1.0 -- -- 13 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.05 0.06 22 1750 710 180 15 120 390 195 1.3 360 Max -- -- 10 250 2.0 0.06 0.09 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = 30 A, VGS = 0 IF = 30 A, VGS = 0, diF/dt = 50 A/s Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V * 3 ID = 15 A, VGS = 4 V * ID = 15 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz ID = 15 A, VGS = 10 V, RL = 2
3
3
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1303
Main Characteristics
Power vs. Temperature Derating
120 500 200
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
100 50 20 10 5 2
D
10
10
1 m
80
0
s
40
1.0 is Limited by RDS (on) 0.5 0 50 100 150 1 3 10
P C W= O pe 10 ra m tio s n (1 (T S C = ho 25 t) Operation in this Area C)
s
s
Ta = 25C
30
100
300
1,000
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50 10 V 5V 7V 50 4V Pulse Test 3.5 V 30
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
40
40
30
20
3V
20 75C 10 TC = 25C -25 C
10
VGS = 2.5 V
0
4
8
12
16
20
0
1
2
3
4
5
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
5 Pulse Test
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
0.5 Pulse Test 0.2 VGS = 4 V 0.1 0.05 10 V
Drain to Source Saturation Voltage VDS (on) (V)
4
3
ID = 50 A
2 20 A 10 A
Static Drain to Source on State Resistance RDS (on) ()
0.02 0.01
1
0.005 2 5 10 20 50 100 200
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1303
Static Drain to Source on State Resistance vs. Temperature
0.20 Pulse Test
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S)
50
0.16
20 10 5 -25C TC = 25C 75C
0.12
ID = 20 A 10 A 50 A
0.08
VGS = 4 V VGS = 10 V
20 A 10 A
2 1.0 VGS = 10 V Pulse Test
0.04
0 -40
0
40
80
120
160
0.5
1.0
2
5
10
20
50
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
5,000 10,000 di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz
Reverse Recovery Time trr (ns)
Capacitance C (pF)
2,000 1,000 500
Ciss 1,000 Coss
Crss 100
200 100 50 0.5
10 1.0 2 5 10 20 50 0 10 20 30 40 50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
100 20
Switching Characteristics
1,000
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
50 V 80 V 12
Switching Time t (ns)
80
VDS
VDD = 25 V
16
500
td (off)
200 100 50 tr
60 VDD = 80 V VGS
tf
40
8
20
50 V 25 V 20 40 60
ID = 30 A
4
. VGS = 10 V, VDD = 30 V . PW = 2 s, duty < 1% td (on)
20 10 0.5
0 0 80 100
1.0
2
5
10
20
50
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1303
Reverse Drain Current vs. Source to Drain Voltage
50
Reverse Drain Current IDR (A)
40
Pulse Test
30
20
10 V 5V VGS = 0, -10 V
10
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 TC = 25C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01
h ul ot P
ch-c (t) = S (t) * ch-c ch-c = 1.25C/W, TC = 25C PDM
se
0.03
1S 0.01 10
T 100 1m 10 m 100 m
PW 1
D = PW T
10
Pulse Width PW (S)
Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vout 50 Vin = 10 V . VDD = 30 V . td(on) Vin 10 %
Waveforms 90 %
10 % 90 % tr 90 % td(off)
10 %
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
2SK1303
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Package Name TO-3P / TO-3PV
MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
4.8 0.2 1.5
15.6 0.3
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part Name 2SK1303-E 30 pcs Quantity Plastic magazine Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
0.3
Sales Strategic Planning Div.
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